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Transistors, Power Bipolar
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Very High Voltage
High voltage NPN power transistor for high definition CRT displays
Datasheet
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Last Updated: 25/01/2008
Pages: 8
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HD1520FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION CRT DISPLAYS
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STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT
Figure 1: Package
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APPLICATIONS
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ISOWATT218FX
HORIZONTAL DEFLECTION FOR LARGE AND FLAT SCREEN 100 Hz COLOR TVs
Figure 2: Internal Schematic Diagram
DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
Table 1:
Part Number HD1520FX Marking H D1520FX Package ISOWATT218FX Packaging T UBE
Table 2: Absolute Maximum Ratings
Symbol VCES VC E O VEBO IC ICM IB IBM Ptot Vins May 2005 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink
o
Value 1500 700 10 15 22 8 12 64 2500 Rev. 1
U n it V V V A A A A W V
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HD1520FX
Symbol Tstg TJ Storage Temperature Max. Operating Junction Temperature Parameter Value -65 to 150 150 U n it C C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-Case Max 1 .95
o
C/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol ICES IEBO Parameter Test Conditions TC = 125 oC Min. Typ. M ax. 0.2 2 10 700 U n it mA mA A V Collector Cut-off Current VCE = 1500 V (VBE = 0) V = 1500 V
CE
Emitter Cut-off Current (IC = 0)
VE B = 5 V IC = 100 mA
VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VEBO VCE(sat)* VBE(sat)* h FE Emitter-Base Voltage (IC = 0 )
IE = 10 mA IB = 1.8 A IB = 1.8 A V CE = 5 V V CE = 1 V V CE = 5 V fh = 31250 Hz IB(off) = -4.2 A VBE(off) = -2.7 V
10 3 1.3 26 5 5.5 3.2 220 9.5 4 300
V V V
Collector-Emitter IC = 9 A Saturation Voltage Base-Emitter Saturation IC = 9 A Voltage DC Current Gain IC = 1 A IC = 9 A IC = 9 A INDUCTIVE LOAD IC = 9 A IB(on) = 1.3 A LBB(on) = 1.9 H VCE(fly) = 1040 V
ts tf
Storage Time Fall Time
s ns
* Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %.
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HD1520FX
Figure 3: Safe Operating Area Figure 6: Derating Curve
Figure 4: Output Chatacterisctics
Figure 7: Reverse Biased SOA
Figure 5: DC Current Gain
Figure 8: DC Current Gain
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HD1520FX
Figure 9: Collector-Emitter Saturation Voltage Figure 11: Base-Emitter Saturation Voltage
Figure 10: Power Losses
Figure 12: Inductive Load Switching Time
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HD1520FX
Figure 13: Power Losses and Inductive Load Switching Test Circuit
Figure 14: Reverse Biased Safe Operating Area Test Circuit
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HD1520FX
ISOWATT218FX MECHANICAL DATA
DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R DIA mm TYP. inch TYP.
MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9.0 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40
MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15.00 2.20 4.20 3.80
MIN. 0.209 0.110 0.122 0.071 0.031 0.026 0.071 0.406 0.602 0.354 0.898 1.035 1.701 0.169 0.957 0.575 0.071 0.150 0.134
MAX. 0.224 0.126 0.138 0.087 0.043 0.037 0.087 0.453 0.618 0.402 0.913 1.051 1.748 0.185 0.972 0.591 0.087 0.165 0.150
5.45
0.215
- Weight : 5.6 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m
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HD1520FX
Figure 5: Revision History
Version 27-May-2005 Release Date 0.1 Initial Release. Change Designator
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HD1520FX
Infor mation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 ST Microelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.co m
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Document Number: 11435
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