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STripFET™ V

Higher frequencies and lower losses in DC-DC converters
 Applications  Design resources  Related information
 
STripFET VMeeting the market demand for more power per cubic inch of the latest DC-DC converters, ST’s latest proprietary STripFET technology delivers extremely low conduction losses and switching losses and achieves the lowest figure of merit (FOM) among comparable devices. ST’s STripFET technology makes use of very high ‘equivalent cell density’ and smaller cell features to achieve extremely low ON-resistance and losses, while using less silicon area. Compared to the earlier generation, it achieves an improvement of approximately 35% in the critical indicator of silicon resistance and active area plus some 25% reduction in total gate charge per active area. This translates into a superior performance than any other comparable power MOSFET available on the market.
 
Datasheets and product selector
 STripFET V
 
Features
Extremely low RDS(on)
Very low switching gate charge
Best FOM, up to 45% lower compared to previous generation
High avalanche ruggedness
Low gate drive power losses
 
Applications
Notebooks
Servers
Desktop
Telecommunications
Networking
 
Design resources
PSpice models
Sales type
Lib
STL65N3LLH5
STU60N3LH5
STD60N3LH5
STU85N3LH5
STD85N3LH5
 
Related information
Press announcements  
Title Date
New-Technology Power MOSFET Family from STMicroelectronics Enables Higher Frequencies and Lower Losses in DC-DC Supplies Feb. 20, 2008

Presentation
Title  
STripFET™ V Download (Feb. 2008, 2Mb)

Promotional documents
Title Reference  
STripFET V FLSTRIP0308 Download (Mar. 2008, 159 Kb)
Power MOSFETs selection guide SGPMOS1107 Download (Oct. 2007, 893 Kb)